M. Mansoor Ahmed
Research in Microelectronics
- M. Sc. 1987, Quaid-i-Azam
- M. Phil. 1990, Punjab
- Ph.D. 1995, Cambridge
- CEng, 1999, Institution of
Engineering and Technology,
- Fellow IET, U.K.
- Senior Member IEEE, USA
- Life Member EDS, USA
- Life Member MTTS, USA
- Member Communication
- Member Circuit and System
Dr. Ahmed completed the PhD degree in Microelectronics from the University of Cambridge, U.K., in 1995, and joined academia where he worked at different positions including Professor; Chairman; Dean; Executive Vice President and Vice Chancellor.
Dr. Ahmed research interests are in Microelectronics, Microwave devices and RF Engineering. He has supervised numerous MS and PhD research projects. He authored 125+ research papers and his ISI research impact factor is 80+ with citation index over 900+.
Dr. Ahmed is a fellow of the Institution of Engineering and Technology (IET), UK.; a Chartered Engineer (CEng) from the UK Engineering Council and holds the title of European Engineer (Eur Ing) from the European Federation of National Engineering Association (FEANI), Brussels. He is a life member of PEC (Pak); EDS and MTTS (USA).
M. M. Ahmed, M. Riaz and U. F. Ahmed, “An improved model for the I − V characteristics of submicron SiC MESFETs by evaluating the potential distribution inside the channel,” Journal of Computational Electronics, vol. 16, no. 3, pp. 514-525, 2017.
M. M. Ahmed, K. S. Karimov and S. A. Moiz, “Photoelectric behavior of n-GaAs/orange dye, vinyl-ethynyl trimethylpiperidole/conductive glass sensor,” Thin Solid Films, vol. 516, no. 21, pp. 7822-7827, 2008.
M. M. Ahmed and S. A. Moiz, “Steering algorithm for drift free control systems,” Communications in Applied Analysis, vol. 11, no. 3-4, pp. 485-514, 2007.
M. M. Ahmed, K. S. Karimov and S. A. Moiz, “Temperaturedependent I − V characteristics of organic-inorganic heterojunction diodes,” IEEE Transactions on Electron Devices, vol. 51, no. 1, pp. 121-126, 2004.
M. M. Ahmed, “An improved method to estimate intrinsic small signal parameters of a GaAs MESFET from measured DC characteristics,” IEEE Transactions on Electron Devices, vol. 50, no. 11, pp. 2196-2201, 2003.
M. M. Ahmed, “Schottky barrier depletion modification-a source of output conductance in submicron GaAs MESFETs,” IEEE Transactions on Electron Devices, vol. 48, no. 5, pp. 830-834, 2001.
M. M. Ahmed, “Optimization of active channel thickness of mmwavelength GaAs MESFETs by using a nonlinear I − V model,” IEEE Transactions on Electron Devices, vol. 47, no. 2, pp. 299-
M. M. Ahmed, “Effects of sintering on Au/Ti/GaAs Schottky barrier submicron metal-semiconductor field-effect transistors characteristics,” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 16, no. 4, pp. 2034-2037, 1998.