1 | Q.D. Memon, U. Munir, U.F. Ahmed, and M.M. Ahmed. “An efficient technique to predict DC characteristics of nano-FinFETs using a deep neural network.” Journal of Computational Electronics 22, no. 1 (2023): 230-241 | 2023 |
2 | M.M. Ahmed, K. Karimov, and U.F. Ahmed. “An improved model to predict DC characteristics of organic field-effect transistors.” Journal of Computational Electronics 20, no. 6 (2021): 2342-2349. | 2021 |
3 | Q.D. Memon, U.F. Ahmed, M.M. Ahmed. “A unified depletion /inversion model for heterojunction trigate FinFETs DC characteristics.” IEEE Access 9 (2021): 89768-89777. | 2021 |
4 | Q.D. Memon, U.F. Ahmed, M.M. Ahmed. “A Schrödinger–Poisson model for output characteristics of trigate ballistic Si fin field effect transistors (FinFETs).” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, e2927 (2021). | 2021 |
5 | U.F. Ahmed, M.M. Ahmed, and Q. D. Memon. “A modified analytical model for AlGaN/GaN FinFETs I-V characteristics.” IOP Semiconductor Science and Technology, vol. 35, no. 3 (2020): 035002. | 2020 |
6 | U.F. Ahmed, and M.M. Ahmed. “A 3-D potential model to assess DC characteristics of Si FinFETs.” Journal of Computational Electronics, vol. 18, no. 3 (2019): 893-905. | 2019 |
7 | U.F. Ahmed, and M.M. Ahmed. “An analytical model to assess DC characteristics of independent gate Si FinFETs.” Turkish Journal of Electrical Engineering and Computer Sciences, vol. 27, no. 4 (2019): 2456-2465. | 2019 |
8 | U.F. Ahmed, M.M. Ahmed, and Q. D. Memon. “A nonlinear compact model for FinFETs output characteristics.” IET Circuits, Devices and Systems, vol. 13, no. 8 (2019) 1249-1254. | 2019 |
9 | S. Rehman, U.F. Ahmed, M.M. Ahmed, and U. Rafique. “An improved space charge distribution analytical model to assess FET’s intrinsic capacitors.” Turkish Journal of Electrical Engineering and Computer Sciences, vol. 27, no. 6 (2019): 4502-4517. | 2019 |
10 | M.N. Khan, U.F. Ahmed, M.M. Ahmed, and S. Rehman. “Simulation and comparative analysis of the DC characteristics of submicron GaN HEMTs for use in CAD software.” Journal of Computational Electronics, vol. 18, no. 2 (2019): 482-491. | 2019 |
11 | S. Fatima, U. Rafique, U.F. Ahmed, and M.M. Ahmed. “A global parameters extraction technique to model organic field effect transistors output characteristics.” Solid-State Electronics, 152 (2019): 81-92. | 2019 |
12 | S. Rehman, U.F. Ahmed, M.M. Ahmed, and M.N. Khan. “Temperature dependent analytical DC model for Wide Bandgap MESFETs.” IEEE Access, 7 (2019): 49702-49711. | 2019 |
13 | M.N. Khan, U.F. Ahmed, M.M. Ahmed, and S. Rehman. “An improved temperature dependent analytical model to predict AlGaN/GaN AC characteristics.” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 32, no. 6 (2019) e2648 (1-16). | 2019 |
14 | M. Riaz, M.M. Ahmed, U. Rafique, and U.F. Ahmed. “Assessment of intrinsic small signal parameters of submicron SiC MESFETs.” Solid-State Electronics, 139 (2018): 80-87. | 2018 |
15 | M.N. Khan, U.F. Ahmed, M.M. Ahmed, and S. Rehman. “An improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTs.” Journal of Computational Electronics, vol. 17, no. 2 (2018): 653-662. | 2018 |
16 | M.M. Ahmed, M. Riaz, and U.F. Ahmed. “An improved model for the I-V characteristics of submicron SiC MESFETs by evaluating the potential distribution inside the channel.” Journal of Computational Electronics, vol. 16, no. 3 (2017): 514-525. | 2017 |