1 | Q. U. Memon, U. Munir, U. F. Ahmed, and M. M. Ahmed, “An efficient technique to predict dc characteristics of nano-finfets using a deep neural network,” Journal of Computational Electronics, vol. 22, no. 1, pp. 230–241, 2023. | 2023 |
2 | Q. U. D. Memon, U. F. Ahmed, and M. M. Ahmed, “A schrodinger–poisson model for output characteristics of trigate ballistic si fin field effect transistors (finfets),” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 35, no. 1, p. e2927, 2022. | 2022 |
3 | M. M. Ahmed, K. Karimov, and U. F. Ahmed, “An improved model to predict dc characteristics of organic field-effect transistors,” Journal of Computational Electronics, vol. 20, no. 6, pp. 2342–2349, 2021. | 2021 |
4 | U. F. Ahmed, M. M. Ahmed et al., “A unified depletion/inversion model for heterojunction trigate finfets dc characteristics,” IEEE Access, vol. 9, pp. 89 768–89 777, 2021. | 2021 |
5 | U. F. Ahmed, M. Ahmed, and Q. Memon, “A modified analytical model for algan/gan finfets i–v characteristics,” Semiconductor Science and technology, vol. 35, no. 3, p. 035002, 2020. | 2020 |
6 | U. F. Ahmed and M. Ahmed, “A 3-d potential model to assess dc characteristics of si finfets,” Journal of Computational Electronics, vol. 18, no. 3, pp. 893–905, 2019. | 2019 |
7 | U. F. Ahmed and M. Ahmed, “An analytical model to assess dc characteristics of independent gate si finfets,” Turkish Journal of Electrical Engineering and Computer Sciences, vol. 27, no. 4, pp. 2456–2465, 2019. | 2019 |
8 | U. F. Ahmed, M. M. Ahmed, and Q. D. Memon, “Non-linear compact model for finfets output characteristics,” IET Circuits, Devices & Systems, vol. 13, no. 8, pp. 1249–1254, 2019. | 2019 |
9 | S. U. Rehman, U. F. Ahmed, M. Ahmed, and U. Rafique, “An improved space charge distribution analytical model to assess field-effect transistor’s intrinsic capacitors,” Turkish Journal of Electrical Engineering and Computer Sciences, vol. 27, no. 6, pp. 4502–4517, 2019. | 2019 |
10 | M. Khan, U. F. Ahmed, M. Ahmed, and S. Rehman, “Simulation and comparative analysis of the dc characteristics of submicron gan hemts for use in cad software,” Journal of Computational Electronics, vol. 18, no. 2, pp. 482–491, 2019. | 2019 |
11 | S. Fatima, U. Rafique, U. F. Ahmed, and M. Ahmed, “A global parameters extraction technique to model organic field effect transistors output characteristics,” Solid-State Electronics, vol. 152, pp. 81–92, 2019. | 2019 |
12 | S.-U. Rehman, U. F. Ahmed, M. M. Ahmed, and M. N. Khan, “Temperature dependent analytical dc model for wide bandgap mesfets,” IEEE Access, vol. 7, pp. 49 702–49 711, 2019. | 2019 |
13 | M. N. Khan, U. F. Ahmed, M. M. Ahmed, and S. Rehman, “An improved temperature dependent analytical model to predict AlGaN/GaN AC characteristics,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 32, no. 6, e2648 (1-16), 2019. | 2019 |
14 | M. Riaz, M. M. Ahmed, U. Rafique, and U. F. Ahmed, “Assessment of intrinsic small signal parameters of submicron sic mesfets,” Solid-State Electronics, vol. 139, pp. 80–87, 2018. | 2018 |
15 | M. Khan, U. F. Ahmed, M. Ahmed, and S. Rehman, “An improved model to assess temperature-dependent dc characteristics of submicron gan hemts,” Journal of Computational Electronics, vol. 17, pp. 653–662, 2018. | 2018 |
16 | M. Ahmed, M. Riaz, and U. F. Ahmed, “An improved model for the i-v characteristics of submicron sic mesfets by evaluating the potential distribution inside the channel,” Journal of Computational Electronics, vol. 16, no. 3, pp. 514–525, 2017. | 2017 |