umer-farooq

Umer Farooq Ahmed

Assistant Professor
PROFILE SUMMARY

Umer F. Ahmed received the B.S. degree (Hons.) in electrical engineering from the COMSATS Institute of Science and Technology, Islamabad, in 2017, and the M.S. degree (Hons.) in electrical engineering from the Capital University of Science and Technology (CUST), Islamabad, in 2019, both with the highest distinction and was a recipient of two gold medals, in each degree. In 2018, he joined as a Research Associate with the Microelectronics and RF Engineering Group, CUST, where he was appointed as a Lecturer with the Department of Electrical Engineering, in 2019. In the following year, he was awarded a Ph.D. Fellowship by the Higher Education Commission of Pakistan and Cambridge Trust, United Kingdom. He completed his PhD in 2024 from the University of Cambridge, United Kingdom. He has published a number of research articles in reputed journals. His research interests include microelectronics, nanowire device fabrication, microwave FETs modeling, and antenna design. He is a Registered Engineer with the Pakistan Engineering Council (PEC), Islamabad.

QUALIFICATION
PhD Electrical Power University of Cambridge, United Kingdom 2024
MS Electrical Engineering Capital University of Science and Technology (CUST), Islamabad 2019
TEACHING EXPERIENCE
Assistant Professor Capital University of Science and Technology Since – 2024
RESEARCH AREAS / INTERESTS
1. High Frequency MESFETs, HEMTs and FinFETs
2. Simulation and Modelling
3. Semiconductor Device Fabrication
4. High Temperature and High Power Microelectronics
JOURNAL PUBLICATIONS
Q.D. Memon, U. Munir, U.F. Ahmed, and M.M. Ahmed. “An efficient technique to predict DC characteristics of nano-FinFETs using a deep neural network.” Journal of Computational Electronics 22, no. 1 (2023): 230-241.
M.M. Ahmed, K. Karimov, and U.F. Ahmed. “An improved model to predict DC characteristics of organic field-effect transistors.” Journal of Computational Electronics 20, no. 6 (2021): 2342-2349.
Q.D. Memon, U.F. Ahmed, M.M. Ahmed. “A unified depletion /inversion model for heterojunction trigate FinFETs DC characteristics.” IEEE Access 9 (2021): 89768-89777.
Q.D. Memon, U.F. Ahmed, M.M. Ahmed. “A Schrödinger–Poisson model for output characteristics of trigate ballistic Si fin field effect transistors (FinFETs).” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, e2927 (2021).
U.F. Ahmed, M.M. Ahmed, and Q. D. Memon. “A modified analytical model for AlGaN/GaN FinFETs I-V characteristics.” IOP Semiconductor Science and Technology, vol. 35, no. 3 (2020): 035002.
U.F. Ahmed, and M.M. Ahmed. “A 3-D potential model to assess DC characteristics of Si FinFETs.” Journal of Computational Electronics, vol. 18, no. 3 (2019): 893-905.
U.F. Ahmed, and M.M. Ahmed. “An analytical model to assess DC characteristics of independent gate Si FinFETs.” Turkish Journal of Electrical Engineering and Computer Sciences, vol. 27, no. 4 (2019): 2456-2465.
U.F. Ahmed, M.M. Ahmed, and Q. D. Memon. “A nonlinear compact model for FinFETs output characteristics.” IET Circuits, Devices and Systems, vol. 13, no. 8 (2019) 1249-1254.
S. Rehman, U.F. Ahmed, M.M. Ahmed, and U. Rafique. “An improved space charge distribution analytical model to assess FET’s intrinsic capacitors.” Turkish Journal of Electrical Engineering and Computer Sciences, vol. 27, no. 6 (2019): 4502-4517.
M.N. Khan, U.F. Ahmed, M.M. Ahmed, and S. Rehman. “Simulation and comparative analysis of the DC characteristics of submicron GaN HEMTs for use in CAD software.” Journal of Computational Electronics, vol. 18, no. 2 (2019): 482-491.
S. Fatima, U. Rafique, U.F. Ahmed, and M.M. Ahmed. “A global parameters extraction technique to model organic field effect transistors output characteristics.” Solid-State Electronics, 152 (2019): 81-92.
S. Rehman, U.F. Ahmed, M.M. Ahmed, and M.N. Khan. “Temperature dependent analytical DC model for Wide Bandgap MESFETs.” IEEE Access, 7 (2019): 49702-49711.
M.N. Khan, U.F. Ahmed, M.M. Ahmed, and S. Rehman. “An improved temperature dependent analytical model to predict AlGaN/GaN AC characteristics.” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, vol. 32, no. 6 (2019) e2648 (1-16).
M. Riaz, M.M. Ahmed, U. Rafique, and U.F. Ahmed. “Assessment of intrinsic small signal parameters of submicron SiC MESFETs.” Solid-State Electronics, 139 (2018): 80-87.
M.N. Khan, U.F. Ahmed, M.M. Ahmed, and S. Rehman. “An improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTs.” Journal of Computational Electronics, vol. 17, no. 2 (2018): 653-662.
M.M. Ahmed, M. Riaz, and U.F. Ahmed. “An improved model for the I-V characteristics of submicron SiC MESFETs by evaluating the potential distribution inside the channel.” Journal of Computational Electronics, vol. 16, no. 3 (2017): 514-525.
CONFERENCE PUBLICATIONS
U.F. Ahmed, W. Afzal, A. Afaq, and S. Rehman. “Stabilization Control for an Inverted Pendulum on a Cart: A Terminal Sliding Mode Approach.” In 2021 Fourth International Conference on Microelectronics, Signals & Systems (ICMSS), pp. 1-6. IEEE, (2021).
U.F. Ahmed, Z. Hameed, F. Ahmed, T.A. U’Chong, M.M.A. Asif. “Design and Development of Control System for Unmanned Ground Vehicle and its Manipulator,” International Conference on Engineering and Emerging Technologies (ICEET), 1-8, IEEE, (2020).
S. Rehman, H. F. Usman, U. F. Ahmed, M. Asif and S. Y. Shin, “An Improved Technique to Assess AC Performance of a Submicron GaN HEMTs,” International Conference on Information and Communication Technology Convergence (ICTC), 1104-1109. IEEE, (2019).
U.F. Ahmed, S. Rehman, U. Rafique and M.M. Ahmed, “AlGaN/GaN FinFET: A comparative study,” 14th International Conference on Emerging Technologies (ICET), 1-6. IEEE, (2018).
S. Rehman, U. Rafique, U.F. Ahmed, M.N. Khan, and M.M. Ahmed. “Effects of substrate on the AC performance of submicron GaN HEMTs.” 13th International Conference on Emerging Technologies (ICET), 1-7. IEEE, (2017).
S.S. Saleem, M.M. Ahmed, U. Rafique, and U.F. Ahmed. “Optimization of linear antenna array for low SLL and high directivity.” 19th International Multi-Topic Conference (INMIC), 1-6. IEEE, (2016).

Other Members